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isc Silicon NPN Power Transistor 2SC3258 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max.)@ I = 3A CE(sat) C High Switching Speed Complement to Type 2SA1293 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 5 A C I Collector Current-Peak 8 A CM I Base Current-Continuous 1 A B Collector Power Dissipation P 30 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3258 ELECTRICAL CHARACTERISTIC... See More ⇒

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