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View 2sc3709 detailed specification:

isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION Low Collector Saturation Voltage- V = 0.4V(Max)@I = 6A CE(sat) C Good Linearity of h FE Complement to Type 2SA1451 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 12 A C I Base Current-Continuous 2 A B Collector Power Dissipation P 30 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3709 ELECTRICAL CHARACTERISTICS T =25 unless otherwise speci... See More ⇒

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