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View 2sc4330 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4330 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 8A CE(sat) C Collector-Emitter Sustaining Voltage- V = 100V (Min) CEO(SUS) High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C I Collector Current-Peak 20 A CM I Base Current-Continuous 5 A B Collector Power Dissipation P 40 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc Website isc & iscsemi is register... See More ⇒

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