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View 2sc4849 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4849 DESCRIPTION Low Collector Saturation Voltage V = 0.6V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current-Continuous 7 A C I Collector Current-Pulse 15 A CM Collector Power Dissipation 2 @ T =25 a P W C Collector Power Dissipation 30 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 ... See More ⇒

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