All Transistors. Equivalents Search

View 2sc6099 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6099 DESCRIPTION Large current capacitance High-speed switching High allowable power dissipation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 6.5 V EBO I Collector Current-Continuous 2 A C I Collector Current-Peak 3 A CM Collector Power Dissipation 15 @ T =25 C P W C Collector Power Dissipation 0.8 @T =25 a T Junction Temperature 150 J Storage Temperature Range -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconducto... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2sc6099.pdf Design, MOSFET, Power

 2sc6099.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc6099.pdf Database, Innovation, IC, Electricity