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View 2sd1105 detailed specification:

isc Silicon NPN Power Transistor 2SD1105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation High Power and High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C I Base Current-Continuous 30 A B Collector Power Dissipation P 200 W C @T =25 C T Junction Temperature 150 j T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1105 ELECTRICAL CHARACTERISTICS T =25 unless otherwise ... See More ⇒

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