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View 2sd1235 detailed specification:

isc Silicon NPN Power Transistors 2SD1235 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 3A CE(sat) C Large Current Capacity Complement to Type 2SB919 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Large current switching of relay drivers, high-speed inverters,converters. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 8 A C I Collector Current-Pulse 15 A CP Collector Power Dissipation 1.75 @ T =25 a P W C Collector Power Dissipation 30 @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power T... See More ⇒

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