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View 2sd1279 detailed specification:

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1279 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO Low Collector-Emitter Saturation Voltage- V = 5.0V(Max.)@ I = 8.0A CE(sat) C Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage power switching TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1400 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current- Continuous 10 A C I Base Current-Continuous 5 A B Collector Power Dissipation P 50 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is r... See More ⇒

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