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View 2sd1351 detailed specification:

isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = 1.0V(Max)@ (I = 2A, I = 0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 3 A C I Base Current-Continuous 0.5 A B Collector Power Dissipation 2 @T =25 a P W C Collector Power Dissipation 30 @T =25 C T Junction Temperature 150 J Storage Temperature -55 150 T stg 1 isc website www.iscsemi.com isc & iscsemi is regist... See More ⇒

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