View 3dd523 detailed specification:
isc Silicon NPN Power Transistor 3DD523 DESCRIPTION Excellent safe operating area Low Collector-Emitter Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 10 A C Collector Power Dissipation P 100 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.52 /W R th j-c 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 3DD523 ELECTRICAL CHAR... See More ⇒
Keywords - ALL TRANSISTORS SPECS
3dd523.pdf Design, MOSFET, Power
3dd523.pdf RoHS Compliant, Service, Triacs, Semiconductor
3dd523.pdf Database, Innovation, IC, Electricity
