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View ipd60r1k4c6 detailed specification:

isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6 FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 3.2 A D I Drain Current-Single Pulsed 8 A DM P Total Dissipation @T =25 28.4 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 4.4 Channel-to-ambient thermal resistance /W Rth(j-a) 62 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N-Channel MO... See More ⇒

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