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View ipd60r400ce detailed specification:

isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CE FEATURES Static drain-source on-resistance RDS(on) 0.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 14.7 A D I Drain Current-Single Pulsed 30 A DM P Total Dissipation @T =25 112 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -40 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 1.12 Channel-to-ambient thermal resistance /W Rth(j-a) 62 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N-Channel ... See More ⇒

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