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View ipd60r600cp detailed specification:

isc N-Channel MOSFET Transistor IPD60R600CP,IIPD60R600CP FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 6.1 A D I Drain Current-Single Pulsed 15 A DM P Total Dissipation @T =25 60 W D C Max. Operating Junction Temperature 150 T j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 2.1 Channel-to-ambient thermal resistance /W Rth(j-a) 62 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark i... See More ⇒

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