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View kp8n60f detailed specification:

isc N-Channel MOSFET Transistor KP8N60F FEATURES Static drain-source on-resistance RDS(on) 0.58 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for active power factor correction and switching mode Power supplies ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 30 V GS I Drain Current-Continuous 8 A D I Drain Current-Single Pulsed 18 A DM P Total Dissipation @T =25 37.9 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 3.3 Channel-to-ambient thermal resistance /W Rth(ch-a) 62.5 1 isc websit... See More ⇒

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