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View ktd1414 detailed specification:

isc Silicon NPN Darlington Power Transistor KTD1414 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Hammer driver,pulse motor driver applications Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 4 A C I Base Current-Continuous 0.5 A B Collector Power Dissipation P 25 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscs... See More ⇒

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