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View spd04n50c3 detailed specification:

isc N-Channel MOSFET Transistor SPD04N50C3,ISPD04N50C3 FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 560 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 4.5 A D I Drain Current-Single Pulsed 13.5 A DM P Total Dissipation @T =25 50 W D C T Max. Operating Junction Temperature 150 j T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 2.5 Channel-to-ambient thermal resistance /W Rth(j-a) 62 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark isc N... See More ⇒

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