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View std10nm60n detailed specification:

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM60N FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Gate-Source Voltage 25 V GSS Drain Current-Continuous@T =25 C 10 I A D 5 T =175 T =125 J C I Drain Current-Single Pulsed 32 A DM P Total Dissipation @T =25 70 W D C T Max. Operating Junction Temperature 150 ch Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1.79 /W Rth(ch-b) Thermal resistance junction-pcb max 5... See More ⇒

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