View std10nm65n detailed specification:
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD10NM65N FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-Source Voltage 25 V GSS Drain Current-ContinuousTc=25 9 I A D 5.7 Tc=100 I Drain Current-Single Pulsed 36 A DM P Total Dissipation @T =25 90 W D C Tj Max. Operating Junction Temperature 150 Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1.38 /W Rth(ch-a) Channel-to-ambient thermal re... See More ⇒
Keywords - ALL TRANSISTORS SPECS
std10nm65n.pdf Design, MOSFET, Power
std10nm65n.pdf RoHS Compliant, Service, Triacs, Semiconductor
std10nm65n.pdf Database, Innovation, IC, Electricity
