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View std18n55m5 detailed specification:

Isc N-Channel MOSFET Transistor STD18N55M5 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 550 V DSS V Gate-Source Voltage 25 V GSS Drain Current-ContinuousTc=25 13 I A D 8.3 Tc=100 I Drain Current-Single Pulsed 52 A DM P Total Dissipation @T =25 90 W D C T Max. Operating Junction Temperature 150 ch Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 1.39 /W Rth(ch-a) Channel-to-ambient thermal resistance 50 1 isc website www.iscsemi.cn isc & iscs... See More ⇒

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