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View buz100sl detailed specification:

BUZ 100SL SIPMOS Power Transistor Product Summary Features Drain source voltage 55 V VDS N channel Drain-Source on-state resistance 0.012 RDS(on) Enhancement mode Continuous drain current 70 A ID Avalanche rated Logic Level dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S BUZ100SL P-TO220-3-1 Q67040-S4000-A2 Tube BUZ100SL E3045A P-TO263-3-2 Q67040-S4000-A6 Tape and Reel BUZ100SL E3045 P-TO263-3-2 Q67040-S4000-A5 Tube Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current A ID TC = 25 C 70 TC = 100 C 50 Pulsed drain current 280 IDpulse TC = 25 C Avalanche energy, single pulse 380 mJ EAS ID = 70 A, VDD = 25 V, RGS = 25 17 Avalanche energy, periodic limited by Tjmax EAR 6 kV/ s Reverse diode dv/dt d... See More ⇒

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