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View spd03n60s5 spu03n60s5 detailed specification:

SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 1.4 New revolutionary high voltage technology ID 3.2 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 Ultra low effective capacitances 3 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 03N60S5 SPU03N60S5 PG-TO251 Q67040-S4227 SPD03N60S5 PG-TO252 Q67040-S4187 03N60S5 Maximum Ratings Parameter Symbol Value Unit A Continuous drain current ID TC = 25 C 3.2 TC = 100 C 2 5.7 Pulsed drain current, tp limited by Tjmax ID puls 100 mJ Avalanche energy, single pulse EAS ID = 2.4 A, VDD = 50 V EAR 0.2 Avalanche energy, repetitive tAR limited by Tjmax1) ID = 3.2 A, VDD = 50 V 3.2 A Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS V 20 VGS Gate source volta... See More ⇒

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