View spd06n80c3 detailed specification:
SPD06N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.9 DS(on)max Extreme dv/dt rated Q 31 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO252-3 Ultra low gate charge Ultra low effective capacitances CoolMOSTM 800V designed for Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Type Package Marking SPD06N80C3 PG-TO252-3 06N80C3 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 6 A D A T =100 C 3.8 A I T =25 C 18 Pulsed drain current2) D,pulse A E I =1.2 A, V =50 V Avalanche energy, single pulse 230 mJ AS D D... See More ⇒
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spd06n80c3.pdf Design, MOSFET, Power
spd06n80c3.pdf RoHS Compliant, Service, Triacs, Semiconductor
spd06n80c3.pdf Database, Innovation, IC, Electricity
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