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View 2n6449 2n6450 detailed specification:

Databook.fxp 1/13/99 2 09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C High Voltage 2N6449 2N6450 Reverse Gate Source Voltage 300 V 200 V Reverse Gate Drain Voltage 300 V 200 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 800 mW 800 mW Power Derating 6.4 mW/ C 6.4 mW/ C At 25 C free air temperature 2N6449 2N6450 Process NJ42 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS 300 200 V IG = 10 A, VDS = V 100 nA VGS = 150V, VDS = V 100 nA VGS = 100V, VDS = V Gate Reverse Current IGSS 100 A VGS = 150V, VDS = V TA = 150 C 100 A VGS = 100V, VDS = V TA = 150 C Gate Source Cutoff Voltage VGS(OFF) 2 15 ... See More ⇒

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