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View auirlr024ntr detailed specification:

PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.065 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qualified * D D Description S Specifically designed for Automotive applications, this S D D Cellular design of HEXFET Power MOSFETs utilizes G G the latest processing techniques to achieve low on- D-Pak I-Pak resistance per silicon area. This benefit combined with AUIRLR024N AUIRLU024N the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and GDS reliable device for use in Automotive ... See More ⇒

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 auirlr024ntr.pdf Design, MOSFET, Power

 auirlr024ntr.pdf RoHS Compliant, Service, Triacs, Semiconductor

 auirlr024ntr.pdf Database, Innovation, IC, Electricity