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View auirls3114z detailed specification:

PD - 96412 AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features VDSS 40V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 3.8m l Enhanced dV/dT and dI/dT capability max. 4.9m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 122A l Repetitive Avalanche Allowed up to Tjmax S ID (Wirebond Limited) 56A l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this S HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per sili- GD con area. Additional features of this design are a 175 C D2Pak junction operating temperature, fast switching speed and AUIRLS3114Z improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for us... See More ⇒

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