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PD - 97753 AUTOMOTIVE GRADE AUIRLR024Z AUIRLU024Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology D V(BR)DSS 55V Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature G Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax S ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest S S processing techniques to achieve extremely low on- D G G resistance per silicon area. Additional features of this D-Pak I-Pak design are a 175 C junction operating temperature, AUIRLRU024Z AUIRLU024Z fast switching speed and improved repetitive ava- lanche rating . These features combine to make this GDS design an extremely efficient and reliable device for Gate Dr... See More ⇒

 

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 auirlu024z.pdf Design, MOSFET, Power

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