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JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 4A, 250V, rDS(ON) = 0.700 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets Pre-RAD Specifications to 100K RAD (Si) 25m . Total dose hardness is offered at 100K RAD (Si) and Dose Rate 1000K RAD (Si) with neutron hardness ranging from 1E13 - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS for 500V product to 1E14 for 100V product. Dose rate hard- - Typically Survives 2E12 if Current Limited to IDM ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. Photo Current This MOSFET is an enhancement-mode silicon-gate po... See More ⇒

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