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View ixfb100n50p detailed specification:

IXFB 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuous 30 V (TAB) G VGSM Transient 40 V D S ID25 TC = 25 C 100 A IDRMS External lead current limit 75 A IDM TC = 25 C, pulse width limited by TJM 250 A G = Gate D = Drain S = Source TAB = Drain IAR TC = 25 C 100 A EAR TC = 25 C 100 mJ EAS TC = 25 C5 J Features dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 20 V/ns l International standard packages TJ 150 C, RG = 2 l Fast recovery diode PD TC = 25 C 1250 W l Unclamped Inductive Switching (UIS) rated TJ -55... See More ⇒

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