View ixfb150n65x2 detailed specification:
Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFB150N65X2 Power MOSFET ID25 = 150A RDS(on) 17m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S Tab VGSS Continuous 30 V VGSM Transient 40 V G = Gate D = Drain ID25 TC = 25 C 150 A S = Source Tab = Drain IDM TC = 25 C, Pulse Width Limited by TJM 300 A IA TC = 25 C20 A EAS TC = 25 C3 J PD TC = 25 C 1560 W dv/dt IS IDM, VDD VDSS, TJ 150 C 50 V/ns Features TJ -55 ... +150 C TJM 150 C Low QG Tstg -55 ... +150 C Avalanche Rated Low Package Inductance TL Maximum Lead Temperature for Soldering 300 C TSOLD Plastic Body for 10s 260 C FC Mounting F... See More ⇒
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ixfb150n65x2.pdf Design, MOSFET, Power
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