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View ixfh120n25t ixft120n25t detailed specification:

Preliminary Technical Information TrenchTM HiperFETTM VDSS = 250V IXFT120N25T Power MOSFETs ID25 = 120A IXFH120N25T RDS(on) 23m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXFT) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 250 V VDGR TJ = 25 C to 150 C, RGS = 1M 250 V TO-247 (IXFH) VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G IDM TC = 25 C, Pulse Width Limited by TJM 300 A D D (Tab) S IA TC = 25 C 60 A EAS TC = 25 C 500 mJ G = Gate D = Drain PD TC = 25 C 890 W S = Source Tab = Drain dv/dt IS IDM, VDD VDSS, TJ 150 C 20 V/ns TJ -55 to +150 C TJM +150 C Features Tstg -55 to +150 C TL 1.6mm (0.063in) from Case for 10s 300 C International Standard Packages TSOLD Plastic Body for 10s 260 C Aval... See More ⇒

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