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View ixfh13n80q ixft13n80q detailed specification:

IXFH 13N80Q VDSS = 800 V HiPerFETTM IXFT 13N80Q ID25 = 13 A Power MOSFETs RDS(on) = 0.70 W Q Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated High dv/dt, Low Qg Preliminary data sheet TO-268 (D3) (IXFT) Case Style Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V G VGS Continuous 20 V (TAB) S VGSM Transient 30 V ID25 TC = 25 C13 A IDM TC = 25 C, pulse width limited by TJM 52 A TO-247 AD (IXFH) IAR TC = 25 C13 A EAR TC = 25 C28 mJ EAS TC = 25 C 750 mJ (TAB) dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS, 5 V/ns TJ 150 C, RG = 2 W PD TC = 25 C 250 W TJ -55 ... +150 C G = Gate D = Drain TJM 150 C S = Source TAB = Drain Tstg -55 ... +150 C TL 1.6 mm (0.062 in.) from case for 10 s 300 C Md Mounting torque 1.13/10 Nm/lb.in. Features Weight TO-247 6 g TO-... See More ⇒

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