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View ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100 detailed specification:

ixfh14n100_ixft14n100_ixfx14n100_ixfh15n100_ixft15n100_ixfx15n100ixfh14n100_ixft14n100_ixfx14n100_ixfh15n100_ixft15n100_ixfx15n100

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W Power MOSFETs IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W trr 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet TO-247 AD Symbol Test Conditions Maximum Ratings (IXFH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 1000 V (TAB) VGS Continuous 20 V VGSM Transient 30 V PLUS 247TM ID25 TC = 25 C 14N100 14 A (IXFX) 15N100 15 A IDM TC = 25 C, pulse width limited by TJM 14N100 56 A 15N100 60 A IAR TC = 25 C 14N100 14 A (TAB) 15N100 15 A G D EAR TC = 25 C45 mJ TO-268 (D3) dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS, 5 V/ns (IXFT) TJ 150 C, RG = 2 W PD TC = 25 C 360 W G (TAB) S TJ -55 ... +150 C TJM 150 C Features Tstg -55 ... +150 C International standard packages Low RDS (on) HDMOSTM process ... See More ⇒

 

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 ixfh14n100 ixft14n100 ixfx14n100 ixfh15n100 ixft15n100 ixfx15n100.pdf Design, MOSFET, Power

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