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View ixfh15n80q ixft15n80q detailed specification:

IXFH 15N80Q VDSS = 800 V HiPerFETTM IXFT 15N80Q ID25 = 15 A Power MOSFETs RDS(on) = 0.60 W Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 800 V VGS Continuous 20 V VGSM Transient 30 V (TAB) ID25 TC = 25 C15 A IDM TC = 25 C, pulse width limited by TJM 60 A IAR TC = 25 C15 A EAR TC = 25 C30 mJ TO-268 (D3) (IXFT) Case Style EAS TC = 25 C 1.0 J dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS, 5 V/ns TJ 150 C, RG = 2 W G S (TAB) PD TC = 25 C 300 W TJ -55 ... +150 C G = Gate D = Drain TJM 150 C S = Source TAB = Drain Tstg -55 ... +150 C TL 1.6 mm (0.062 in.) from case for 10 s 300 C Md Mounting torque 1.13/10 Nm/lb.in. Features Weight TO-247 6 g TO-268 4 g IXYS advance... See More ⇒

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