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View ixfk260n17t ixfx260n17t detailed specification:

Advance Technical Information GigaMOSTM VDSS = 170V IXFK260N17T ID25 = 260A Power MOSFET IXFX260N17T RDS(on) 6.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 170 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS = 1M 170 V VGSS Continuous 20 V PLUS247 (IXFX) VGSM Transient 30 V ID25 TC = 25 C 260 A IL(RMS) External Lead Current Limit 160 A IDM TC = 25 C, Pulse Width Limited by TJM 700 A IA TC = 25 C 100 A EAS TC = 25 C3 J (TAB) PD TC = 25 C 1670 W G = Gate D = Drain dV/dt IS IDM, VDD VDSS, TJ 175 C 20 V/ns S = Source TAB = Drain TJ -55 ... +175 C TJM 175 C Features Tstg -55 ... +175 C TL 1.6mm (0.062 in.) from Case for 10s 300 C International Standar... See More ⇒

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