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View ixfk26n60q ixfx26n60q detailed specification:

IXFK 26N60Q VDSS = 600 V HiPerFETTM IXFX 26N60Q ID25 = 26 A Power MOSFETs RDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 20 V VGSM Transient 30 V D (TAB) ID25 TC = 25 C26 A G IDM TC = 25 C, pulse width limited by TJM 104 A D IAR TC = 25 C26 A EAR TC = 25 C45 mJ EAS TC = 25 C 1.5 J dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 5 V/ns TJ 150 C, RG = 2 TO-264 AA (IXFK) PD TC = 25 C 360 W TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C G D S D (TAB) TL 1.6 mm (0.063 in) from case for 10 s 300 C G = Gate D = Drain Md Mounting torque TO-264 0.9/6 Nm/lb.in. S... See More ⇒

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