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View ixfn230n20t detailed specification:

Advance Technical Information GigaMOSTM VDSS = 200V IXFN230N20T ID25 = 230A Power MOSFET RDS(on) 7.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 Fast Intrinsic Diode E153432 S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C, RGS = 1M 200 V VGSS Continuous 20 V S VGSM Transient 30 V D ID25 TC = 25 C 220 A G = Gate D = Drain IL(RMS) External Lead Current Limit 200 A S = Source IDM TC = 25 C, Pulse Width Limited by TJM 630 A Either Source Terminal S can be used as IA TC = 25 C 100 A the Source Terminal or the Kelvin Source EAS TC = 25 C3 J ( Gate Return ) Terminal. dV/dt IS IDM, VDD VDSS, TJ 175 C 20 V/ns Features PD TC = 25 C 1090 W TJ -55 ... +175 C International Standard Packag... See More ⇒

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