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View ixfn24n100 detailed specification:

HiPerFETTM Power VDSS = 1000V IXFN24N100 MOSFET ID25 = 24A RDS(on) 390m N-Channel Enhancement Mode trr 250ns Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25 C to 150 C 1000 V S G VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V S D ID25 TC = 25 C24 A IDM TC = 25 C, pulse width limited by TJM 96 A G = Gate D = Drain IA TC = 25 C24 A S = Source EAS TC = 25 C3 J Either Source terminal at miniBLOC can be used as Main or Kelvin Source dV/dt IS IDM, VDD VDSS, TJ 150 C 5 V/ns PD TC = 25 C 568 W Features TJ -55 ... +150 C International standard package TJM 150 C Encapsulating epoxy meets UL 94 V-0, flammability classification Tstg -55 ... +150 C mini... See More ⇒

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