All Transistors. Equivalents Search

View ixfn26n90 ixfn25n90 detailed specification:

VDSS ID (cont) RDS(on) trr HiPerFETTM Power MOSFETs 900 V 26 A 0.30 W 250 ns IXFN 26N90 Single Die MOSFET IXFN 25N90 900 V 25 A 0.33 W 250 ns N-Channel Enhancement Mode D Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 VDSS TJ = 25 C to 150 C 900 V S VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V G VGS Continuous 20 V VGSM Transient 30 V S ID25 TC = 25 C 26N90 26 A D 25N90 25 IDM TC = 25 C, pulse width limited by TJM 26N90 104 A G = Gate D = Drain 25N90 100 S = Source IAR TC = 25 C 26N90 26 A 25N90 25 Either Source terminal at miniBLOC can be used as Main or Kelvin Source EAR TC = 25 C64 mJ EAS TC = 25 C3 J dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS, 5 V/ns TJ 150 C, RG = 2 W PD TC = 25 C 600 W Features TJ -55 ... +150 C Internati... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 ixfn26n90 ixfn25n90.pdf Design, MOSFET, Power

 ixfn26n90 ixfn25n90.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixfn26n90 ixfn25n90.pdf Database, Innovation, IC, Electricity