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View ixgh72n60c3 detailed specification:

VCES = 600V GenX3TM 600V IGBT IXGH72N60C3 IC110 = 72A VCE(sat) 2.5V tfi (typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G VGEM Transient 30 V C Tab E IC25 TC = 25 C (Limited by Leads) 75 A IC110 TC = 110 C (Chip Capability) 72 A ICM TC = 25 C, 1ms 360 A G = Gate C = Collector E = Emitter Tab = Collector IA TC = 25 C 50 A EAS TC = 25 C 500 mJ SSOA VGE= 15V, TVJ = 125 C, RG = 2 ICM = 150 A (RBSOA) Clamped Inductive Load VCE VCES Features PC TC = 25 C 540 W Optimized for Low Switching Losses TJ -55 ... +150 C Square RBSOA TJM 150 C Avalanche Rated Tstg -55 ... +150 C International Standard Package TL Maximum Lead Temperature for Soldering ... See More ⇒

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