View ixta2n80 ixtp2n80 detailed specification:

ixta2n80_ixtp2n80ixta2n80_ixtp2n80

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A IDM TC = 25 C, pulse width limited by TJM 8 A TO-263 AA (IXTA) IAR 2 A EAR TC = 25 C6 mJ EAS TC = 25 C 200 mJ G dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 5 V/ns S D (TAB) TJ 150 C, RG = 18 PD TC = 25 C54 W G = Gate, D = Drain, TJ -55 ... +150 C S = Source, TAB = Drain TJM 150 C Tstg -55 ... +150 C Md Mounting torque 1.13/10 Nm/lb.in. Features Weight 4 g Maximum lead temperature for soldering 300 C International standard packages 1.6 mm (0... See More ⇒

 

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