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View ixtq18n60p ixtv18n60p detailed specification:

IXTQ 18N60P VDSS = 600 V PolarHVTM IXTV 18N60P ID25 = 18 A Power MOSFET IXTV 18N60PS RDS(on) 420 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G VGSM Tranisent 40 V D (TAB) D S ID25 TC = 25 C18 A IDM TC = 25 C, pulse width limited by TJM 54 A PLUS220 (IXTV) IAR TC = 25 C18 A EAR TC = 25 C30 mJ EAS TC = 25 C 1.0 J G D (TAB) D dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 10 V/ns S TJ 150 C, RG = 5 PD TC = 25 C 360 W PLUS220SMD (IXTV...S) TJ -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TL 1.6 mm (0.062 in.) from case for 10 s 300 C G TSOLD Plastic body for 10 s 260 C S D (TAB) Md Mounting torque (TO-3P) 1.13/10 Nm/lb.in. G = Gate ... See More ⇒

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