All Transistors. Equivalents Search

View 2n7000 detailed specification:

2N7000 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VGSS Gate-Source Voltage V 1 2 3 20 ID Continuous 500 1. SOURCE Drain Current mA 2. GATE IDP Pulsed(Note 1) 2000 3. DRAIN PD Drain Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% EQUIVALENT CIRCUIT D G S PLEASE HANDLE WITH CAUTION... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 2n7000.pdf Design, MOSFET, Power

 2n7000.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2n7000.pdf Database, Innovation, IC, Electricity