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View 2n7000a detailed specification:

2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controolled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VDGR Drain-Gate Voltage (RGS 1 ) 60 V 1 2 3 VGSS 20 Gate-Source Voltage V 1. SOURCE 2. GATE ID Continuous 200 3. DRAIN Drain Current mA IDP Pulsed 500 PD Drain Power Dissipation 400 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range EQUIVALENT CIRCUIT D G S THIS TR... See More ⇒

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