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View 2n7002 detailed specification:

2N7002 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L High density cell design for low RDS(ON). DIM MILLIMETERS Voltage controlled small signal switch. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Rugged and reliable. C 1.30 MAX 2 3 High saturation current capablity. D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 P P L 0.55 MAXIMUM RATING (Ta=25 ) M 0.20 MIN N 1.00+0.20/-0.10 CHARACTERISTIC SYMBOL RATING UNIT P 7 VDSS M Drain-Source Voltage 60 V VGSS Gate-Source Voltage V 20 1. SOURCE ID Continuous 300 2. GATE Drain Current mA 3. DRAIN IDP Pulsed (Note 1) 1200 PD Drain Power Dissipation (Note 2) 300 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% No... See More ⇒

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