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View 2n7002a detailed specification:

2N7002A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L High density cell design for low RDS(ON). DIM MILLIMETERS Voltage controolled small signal switch. _ A + 2.93 0.20 B 1.30+0.20/-0.15 Rugged and reliable. C 1.30 MAX 2 3 High saturation current capablity. D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 0.10 P P L 0.55 MAXIMUM RATING (Ta=25 ) M 0.20 MIN N 1.00+0.20/-0.10 CHARACTERISTIC SYMBOL RATING UNIT P 7 M VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS 1 ) 60 V 1. SOURCE VGSS 2. GATE Gate-Source Voltage V 20 3. DRAIN ID Continuous 115 Drain Current mA IDP Pulsed 800 PD Drain Power Dissipation 200 mW SOT-23 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Marking EQUIVALENT C... See More ⇒

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