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KF5N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 electronic ballast and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ + F 2.30 0.10 G 0.96 MAX VDSS= 500V, ID= 4.3A H 0.90 MAX H J _ J 1.80 + 0.20 Drain-Source ON Resistance RDS(ON)=1.4 (Max) @VGS = 10V E _ K 2.30 + 0.10 G N Qg(typ) = 12nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 trr(typ) = 150ns (KF5N50DS) N 0.70 MIN O Max 0.1 trr(typ) = 300ns (KF5N50DZ) 1 2 3 MAXIMUM RATING (Tc=25 ) O CHARACTERISTIC SYMBOL ... See More ⇒

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