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KF5N53FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 525V, ID= 5.0A Drain-Source ON Resistance RDS(ON)=1.5 @VGS = 10V Qg(typ) = 12nC trr(typ) = 150ns MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 525 V VGSS Gate-Source Voltage V 30 @TC=25 5.0* ID Drain Current @TC=100 2.9* A IDP Pulsed (Note1) 13* Single Pulsed Avalanche Energy EAS 270 mJ (Note 2) Repetitive Avalanche Energy EAR 8.6 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 20 V/ns (Note 3) 37.9 W Tc=25 Drain... See More ⇒

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