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KF9N25D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for DC/DC Converters L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 and switching mode power supplies. _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15 B FEATURES _ + F 2.30 0.10 G 0.96 MAX VDSS= 250V, ID= 7.5A H 0.90 MAX H J _ J 1.80 + 0.20 Drain-Source ON Resistance RDS(ON)=0.4 @VGS = 10V E _ K 2.30 + 0.10 G N Qg(typ) = 14.5nC _ L 0.50 + 0.10 F F M _ + M 0.50 0.10 N 0.70 MIN O 0.1 MAX MAXIMUM RATING (Ta=25 ) 1 2 3 1. GATE 2. DRAIN CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE O VDSS Drain-Source Voltage 250 V VGSS Gate-Source Voltage ... See More ⇒

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