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KHB1D2N80D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ switching mode power supplies. B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 + 0.15 B _ F 2.30 + 0.10 G 0.96 MAX FEATURES H 0.90 MAX H J VDSS= 800V, ID= 1.2A _ J 1.80 + 0.20 E _ K 2.30 + 0.10 G N Drain-Source ON Resistance _ L 0.50 + 0.10 F F M _ + M 0.50 0.10 RDS(ON)=16 (Max), @VGS = 10V N 0.70 MIN O 0.1 MAX Qg = 7.0nC(typ.) 1 2 3 1. GATE 2. DRAIN 3. SOURCE O MAXIMUM RATING (Ta=25 ) DPAK (1) RATING CHARACTERISTIC SYMBOL UNIT KHB1D2N80D KHB1D2... See More ⇒

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