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KHB3D0N90P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB3D0N90P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ avalanche characteristics. It is mainly suitable for electronic ballast and A 9.9 + 0.2 B B 15.95 MAX Q switch mode power supplies. C 1.3+0.1/-0.05 _ I D 0.8 + 0.1 _ E 3.6 + 0.2 K _ P F 2.8 + 0.1 3.7 G M L 0.5+0.1/-0.05 H FEATURES J 1.5 I D _ J 13.08 + 0.3 VDSS= 900V, ID= 3A H 1.46 N N K _ L 1.4 + 0.1 Drain-Source ON Resistance _ M 1.27 + 0.1 _ N 2.54 + 0.2 RDS(ON)=4.5 @VGS = 10V _ O 4.5 + 0.2 _ Qg(typ.) = 25nC P 2.4 + 0.2 1 2 3 1. GATE _ 2. DRAIN Q 9.2 + 0.2 3. SOURCE TO-220AB MAXIMUM RATING (Tc=25 ) RATING KHB3D0N90F1 CHARACTERISTIC SYMBOL UN... See More ⇒

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